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Open Access | Research Article | 13 December 2025
Effect of Ta Doping on the Structural, Microstructural, and Electrical Properties of NaNbO3 for Energy Storage Applications
Journal of Advanced Electronic Materials | Volume 1, Issue 1: 39-46, 2025 | DOI: 10.62762/JAEM.2025.415620
Abstract
Enhancing the energy-storage performance of lead-free dielectric ceramics is essential for developing environmentally sustainable capacitors and power devices. NaNbO$_3$, a promising perovskite, exhibits considerable potential for dielectric applications but is limited by poor densification and high dielectric loss. In this work, the effects of tantalum (Ta) doping at varying concentrations $\text{NaNb}_{1-x}\text{Ta}_x\text{O}_3$, with $x = 0.05, 0.10, \text{and } 0.15$, corresponding to 5%, 10%, and 15% Ta substitution on the crystal structure, microstructure, and electrical properties of NaNbO$_3$ ceramics were systematically investigated. X-ray diffraction (XRD) confirmed phase purity an... More >

Graphical Abstract
Effect of Ta Doping on the Structural, Microstructural, and Electrical Properties of NaNbO3 for Energy Storage Applications