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TY - JOUR
AU - Soheli, Sairatun Nesa
AU - Wilson, Callum
AU - Sun, Dongyang
AU - Shyha, Islam
AU - Lu, Zhilun
PY - 2025
DA - 2025/12/13
TI - Effect of Ta Doping on the Structural, Microstructural, and Electrical Properties of NaNbO3 for Energy Storage Applications
JO - Journal of Advanced Electronic Materials
T2 - Journal of Advanced Electronic Materials
JF - Journal of Advanced Electronic Materials
VL - 1
IS - 1
SP - 39
EP - 46
DO - 10.62762/JAEM.2025.415620
UR - https://www.icck.org/article/abs/JAEM.2025.415620
KW - NaNbO3
KW - antiferroelectric
KW - lead-free materials
KW - perovskite ceramics
KW - energy storage capacitors
AB - Enhancing the energy-storage performance of lead-free dielectric ceramics is essential for developing environmentally sustainable capacitors and power devices. NaNbO$_3$, a promising perovskite, exhibits considerable potential for dielectric applications but is limited by poor densification and high dielectric loss. In this work, the effects of tantalum (Ta) doping at varying concentrations $\text{NaNb}_{1-x}\text{Ta}_x\text{O}_3$, with $x = 0.05, 0.10, \text{and } 0.15$, corresponding to 5%, 10%, and 15% Ta substitution on the crystal structure, microstructure, and electrical properties of NaNbO$_3$ ceramics were systematically investigated. X-ray diffraction (XRD) confirmed phase purity and the orthorhombic perovskite structure, while scanning electron microscopy (SEM) revealed enhanced grain uniformity and densification with increasing Ta content. Electrical characterisation was conducted using complex impedance spectroscopy, dielectric loss ($\tan \delta$), capacitance ($C'$), and admittance ($Y'$) measurements over a frequency range of $10^1$ to $10^6$ Hz. The results indicate that 15% Ta-doped NaNbO$_3$ exhibits the optimal combination of a high dielectric constant and low dielectric loss. This improvement is attributed to refined grain morphology and optimised Ta substitution, confirming its potential as a high-performance, lead-free dielectric material for advanced energy-storage devices.
SN - pending
PB - Institute of Central Computation and Knowledge
LA - English
ER -
@article{Soheli2025Effect,
author = {Sairatun Nesa Soheli and Callum Wilson and Dongyang Sun and Islam Shyha and Zhilun Lu},
title = {Effect of Ta Doping on the Structural, Microstructural, and Electrical Properties of NaNbO3 for Energy Storage Applications},
journal = {Journal of Advanced Electronic Materials},
year = {2025},
volume = {1},
number = {1},
pages = {39-46},
doi = {10.62762/JAEM.2025.415620},
url = {https://www.icck.org/article/abs/JAEM.2025.415620},
abstract = {Enhancing the energy-storage performance of lead-free dielectric ceramics is essential for developing environmentally sustainable capacitors and power devices. NaNbO\$\_3\$, a promising perovskite, exhibits considerable potential for dielectric applications but is limited by poor densification and high dielectric loss. In this work, the effects of tantalum (Ta) doping at varying concentrations \$\text{NaNb}\_{1-x}\text{Ta}\_x\text{O}\_3\$, with \$x = 0.05, 0.10, \text{and } 0.15\$, corresponding to 5\%, 10\%, and 15\% Ta substitution on the crystal structure, microstructure, and electrical properties of NaNbO\$\_3\$ ceramics were systematically investigated. X-ray diffraction (XRD) confirmed phase purity and the orthorhombic perovskite structure, while scanning electron microscopy (SEM) revealed enhanced grain uniformity and densification with increasing Ta content. Electrical characterisation was conducted using complex impedance spectroscopy, dielectric loss (\$\tan \delta\$), capacitance (\$C'\$), and admittance (\$Y'\$) measurements over a frequency range of \$10^1\$ to \$10^6\$ Hz. The results indicate that 15\% Ta-doped NaNbO\$\_3\$ exhibits the optimal combination of a high dielectric constant and low dielectric loss. This improvement is attributed to refined grain morphology and optimised Ta substitution, confirming its potential as a high-performance, lead-free dielectric material for advanced energy-storage devices.},
keywords = {NaNbO3, antiferroelectric, lead-free materials, perovskite ceramics, energy storage capacitors},
issn = {pending},
publisher = {Institute of Central Computation and Knowledge}
}
Copyright © 2025 by the Author(s). Published by Institute of Central Computation and Knowledge. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/), which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. 
Journal of Advanced Electronic Materials
ISSN: pending (Online) | ISSN: pending (Print)
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