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TY - JOUR
AU - Fazal, Sana
AU - Shah, Kainat
PY - 2025
DA - 2025/12/11
TI - Dielectric, Ferroelectric, and Optical Properties of Sr0.7Bi0.2TiO3-Based Ceramics
JO - Journal of Advanced Electronic Materials
T2 - Journal of Advanced Electronic Materials
JF - Journal of Advanced Electronic Materials
VL - 1
IS - 1
SP - 17
EP - 23
DO - 10.62762/JAEM.2025.458530
UR - https://www.icck.org/article/abs/JAEM.2025.458530
KW - Sr0.7Bi0.2TiO3
KW - additives
KW - donors
KW - acceptors
KW - relaxor
AB - In this work, the effect of additives (Al\(_2\)O\(_3\), ZrO\(_2\), and Nb\(_2\)O\(_5\)) on the dielectric and ferroelectric properties of Sr\(_{0.7}\)Bi\(_{0.2}\)TiO\(_3\) (SBT) relaxor ferroelectric was investigated. Relative density of SBT was estimated to be above 95%. XRD analysis confirmed the formation of cubic perovskite structure for all the samples. \(P_{\text{max}}\) of SBT decreased by adding ZrO\(_2\), Nb\(_2\)O\(_5\) and Al\(_2\)O\(_3\), while remnant polarization (\(P_r\)) and coercive field (\(E_c\)) increased. For pure SBT, the breakdown strength was 75 kV which increased to 90 kV for ZrO\(_2\)- and Al\(_2\)O\(_3\)-added SBT but decreased to 60 kV when the additive was Nb\(_2\)O\(_5\). As Nb acts as a donor in the NBT, increasing the leakage current and reduced the breakdown strength. Overall, the recoverable energy storage density (\(W_{\text{rec}}\)) of SBT decreased with the addition of additives. It was interesting to note that the dielectric loss significantly decreased with additives. The optical band gap of SBT slightly decreased from 2.98 eV to 2.97 and 2.96 eV (for Al\(_2\)O\(_3\) and ZrO\(_2\) added to SBT) while it surprisingly increased to 2.99 eV when the additive was Nb\(_2\)O\(_5\). This may be attributed to the reason optical band gap does not show the localized defect states or electrical conduction paths, thus underestimating the band gap from DRS.
SN - pending
PB - Institute of Central Computation and Knowledge
LA - English
ER -
@article{Fazal2025Dielectric,
author = {Sana Fazal and Kainat Shah},
title = {Dielectric, Ferroelectric, and Optical Properties of Sr0.7Bi0.2TiO3-Based Ceramics},
journal = {Journal of Advanced Electronic Materials},
year = {2025},
volume = {1},
number = {1},
pages = {17-23},
doi = {10.62762/JAEM.2025.458530},
url = {https://www.icck.org/article/abs/JAEM.2025.458530},
abstract = {In this work, the effect of additives (Al\(\_2\)O\(\_3\), ZrO\(\_2\), and Nb\(\_2\)O\(\_5\)) on the dielectric and ferroelectric properties of Sr\(\_{0.7}\)Bi\(\_{0.2}\)TiO\(\_3\) (SBT) relaxor ferroelectric was investigated. Relative density of SBT was estimated to be above 95\%. XRD analysis confirmed the formation of cubic perovskite structure for all the samples. \(P\_{\text{max}}\) of SBT decreased by adding ZrO\(\_2\), Nb\(\_2\)O\(\_5\) and Al\(\_2\)O\(\_3\), while remnant polarization (\(P\_r\)) and coercive field (\(E\_c\)) increased. For pure SBT, the breakdown strength was 75 kV which increased to 90 kV for ZrO\(\_2\)- and Al\(\_2\)O\(\_3\)-added SBT but decreased to 60 kV when the additive was Nb\(\_2\)O\(\_5\). As Nb acts as a donor in the NBT, increasing the leakage current and reduced the breakdown strength. Overall, the recoverable energy storage density (\(W\_{\text{rec}}\)) of SBT decreased with the addition of additives. It was interesting to note that the dielectric loss significantly decreased with additives. The optical band gap of SBT slightly decreased from 2.98 eV to 2.97 and 2.96 eV (for Al\(\_2\)O\(\_3\) and ZrO\(\_2\) added to SBT) while it surprisingly increased to 2.99 eV when the additive was Nb\(\_2\)O\(\_5\). This may be attributed to the reason optical band gap does not show the localized defect states or electrical conduction paths, thus underestimating the band gap from DRS.},
keywords = {Sr0.7Bi0.2TiO3, additives, donors, acceptors, relaxor},
issn = {pending},
publisher = {Institute of Central Computation and Knowledge}
}
Copyright © 2025 by the Author(s). Published by Institute of Central Computation and Knowledge. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/), which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. 
Journal of Advanced Electronic Materials
ISSN: pending (Online) | ISSN: pending (Print)
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