This research focuses on the computational analysis and numerical investigation of BrCl ion density within an HBr-Cl_2 capacitively coupled plasma system. A two-dimensional fluid simulation model was developed to examine the influence of varying the HBr: Cl_2 gas ratio on BrCl ion formation. The simulation framework incorporates fundamental plasma fluid equations, including the continuity equation, momentum conservation equations, and energy conservation equations, along with appropriate boundary conditions. The investigation specifically explored gas composition variations ranging from 10% Cl_2 and 90% HBr to 90% Cl_2 and 10% HBr, incremented in 20% steps. The radio frequency (RF) driving frequency was fixed at 13.56 MHz throughout the simulations. Results revealed a positive correlation between the Cl_2 concentration and the BrCl ion density; higher Cl_2 content led to increased BrCl ion production. Notably, elevated BrCl ion densities were observed near the electrode edges and at the electrode center. The generated two-dimensional and three-dimensional simulation data offer foundational insights for practical industrial applications, particularly in advanced semiconductor etching and deposition technologies.